Assessment and Investigation of the Pd Nanoparticles-Assisted Chemical Etching of Silicon for Ethanol Solution Electrooxidation

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Assessment and Investigation of the Pd Nanoparticles-Assisted Chemical Etching of Silicon for Ethanol Solution Electrooxidation

February 9, 2021 Chemical Science 0

The formation of porous silicon in HF/H2O2/H2O solution by Pd nanoparticles-assisted chemical etching of single-crystal Si with resistivity = 0.01 Ω.cm was tested at 25 °C, 50 °C and 75 °C. Via optical and scanning electron microscopy and gravimetric analysis, porous layers of silicon were examined. It is demonstrated that por-Si, formed by chemical etching assisted by Pd nanoparticles, has the property of electrooxidation of ethanol. The chromatographic analysis on por-Si/Pd of ethanol electrooxidation products shows that CO2, CH4, H2, CO, O2, acetaldehyde (CHO)+, methanol, and water vapor are the main products. By calculating the short circuit current in ethanol solutions, the mass behavior of the por-Si/Pd system was investigated. The effect of the porous silicon and wafer thickness on the mass activity and the charge measured during the electrooxidation of ethanol has been identified. In addition, the mechanism of transport of charges during the electrooxidation of ethanol was identified. The high sample porosity ensures the reactants’ access to the por-Si/Pd surface and the removal of the reaction products. The incremental decrease in the rate of evolution of gas was due to surface contamination with reaction products. The key variables described by EEO efficiency are porous silicon thickness, porosity and solution composition.

Author (s) Details

Olga Volovlikova
Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia.

Gennady Silakov
Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia.

Sergey Gavrilov
Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia.

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