Elaborative Study on Optical, Thermal and Nonlinear Properties of Tristhiourea Lanthanum Nitrate

Science Press Release Distribution Services

Elaborative Study on Optical, Thermal and Nonlinear Properties of Tristhiourea Lanthanum Nitrate

October 16, 2020 Engineering 0

The single crystals of tristhiourea lanthanum nitrate (TTLaN) were grown using a slow evaporation technique via solution growth. An X-ray diffractometer was used to analyse the powder X-ray diffraction pattern using Rigaku III model equipment. The optical study found that with a lower cut off wavelength of 235.78 nm, the crystal has elevated transmission. The EDAX analysis confirmed the compound elements that were grown. Using Fourier transforminfrared technology, the existence of functional groups was established. Thermogravimetric and differential thermal analysis curves have been used to determine the thermal stability of the crystal. The TTLaN crystal ‘s second harmonic generation behaviour was tested using the Kurtz-Perry powder technique. These single novel semi-organic TTLaN crystals have demonstrated very strong optical transmission properties, high thermal stability and a high degree of non-linearity. Purity of the The crystal is verified by the sharpness of the peaks of endothermia. The SHG verified the crystal’s NLO property. The mechanical strength was proven by the examination of micro hardness. TTLaN crystals therefore have strong optical transmission properties, high thermal stability and great nonlinearity characteristics.

Author (s) Details

Dr. V. S. Kumar
Department of Physics, Swami Dayananda College of Arts and Science, (Affiliated to Bharathidasan University, Tiruchirappalli), Manjakkudi, Tiruvarur Dt., Tamilnadu, India.

Dr. R. S. Sundararajan
PG and Research Department of Physics, Government Arts College(Autonomous), (Affiliated to Bharathidasan University, Tiruchirappalli), Kumbakonam, Thanjavur Dt, Tamilnadu, India.

View Book :- https://bp.bookpi.org/index.php/bpi/catalog/book/285

 

Leave a Reply

Your email address will not be published. Required fields are marked *