Growth and Characterization of M-Plane GaN on γ-LiAlO2 (100) Substrates by Plasma-Assisted Molecular Beam Epitaxy

On LiAlO2 substrates, M-plane GaN thin films were presented using plasma-helped molecular beam epitaxy at differing N/Ga flux ratios. As the N/Ga motion ratio declined, the GaN surface trended to a flat morphology accompanying stripes along [112¯0] and shown a better crystal character. This trend had been examined that the substrate could be damaged by N2 body tissue during the extreme N/Ga flux ratio progress condition and easily cause the composition of Li5GaO4 on the interface between GaN and substrate.

Author(s) Details:

Yu-Chiao Lin,
Bruker Taiwan co., Ltd., Taiwan.

Ikai Lo,
Department of Physics, National Sun Yat-sen University, Taiwan.

Hui-Chun Shih,
Department of Physics, National Sun Yat-sen University, Taiwan.

Mitch M. C. Chou,
Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Taiwan.

D. M. Schaadt,
Institute of Energy Research and Physical Technologies, Clausthal University of Technology (TUC), Germany.

Please see the link here: https://stm.bookpi.org/NFPSR-V5/article/view/8858

Keywords: M-plane GaN, LiAlO2, molecular beam epitaxy, non-polar GaN