Making Inverters for Domestic Photovoltaic Applications More Robust: The Relevance of a Mixed 5-level Topology

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Making Inverters for Domestic Photovoltaic Applications More Robust: The Relevance of a Mixed 5-level Topology

July 6, 2020 Physical Science 0

Under the growing impetus of renewable energy policies, the number of grid-connected domestic photovoltaic power plants will increase considerably in the coming years. Inverters are important links because they must not penalize the energy efficiency of the systems and the quality of the signals injected into the AC grid must be indisputable. Transformerless multilevel inverters are well used in grid connected home photovoltaic applications because of their ability to generate very good waveforms, reducing switching frequency, and their low voltage on power devices. However, this type of inverter needs to be modified to both limit common-mode currents and improve system robustness. Neutral point clamped topologies can certainly provide an answer to these problems, but their electronic structure can sometimes be difficult to implement and development costs can be important. This chapter presents a new 5-level mixed-mode inverter that meets these challenges. The operating principle of the inverter is proposed. Many experimental measurements, carried out at low output power, are described to validate this new concept. In particular, the output voltage and current as well as the total harmonic distortion of the output voltage underline the relevance of such a structure.

Author(s) Details

Dr. Sébastien Jacques
 Research Group on Materials, Microelectronics, Acoustics and Nanotechnology (GREMAN UMR 7347), University of Tours, CNRS, INSA Centre Val-de-Loire, 10 rue Thalès de Milet, Tours Cedex 2, 37071, France.

Prof. Jean-Charles Le Bunetel
Research Group on Materials, Microelectronics, Acoustics and Nanotechnology (GREMAN UMR 7347), University of Tours, CNRS, INSA Centre Val-de-Loire, 10 rue Thalès de Milet, Tours Cedex 2, 37071, France.

Dr. Ismail Aouichak
Research Group on Materials, Microelectronics, Acoustics and Nanotechnology (GREMAN UMR 7347), University of Tours, CNRS, INSA Centre Val-de-Loire, 10 rue Thalès de Milet, Tours Cedex 2, 37071, France.

Dr. Yves Raingeaud
Research Group on Materials, Microelectronics, Acoustics and Nanotechnology (GREMAN UMR 7347), University of Tours, CNRS, INSA Centre Val-de-Loire, 10 rue Thalès de Milet, Tours Cedex 2, 37071, France.

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